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Adhesion of Diazoquinone–Novolac Photoresist Films Implanted with Boron and Phosphorus Ions to Single-Crystal Silicon

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Abstract

The effect of ion implantation on the specific energy of delamination of FP9120 diazoquinone–novolac photoresist films deposited on single-crystal silicon wafers has been studied. It has been found that during the implantation of boron and phosphorus ions, ester crosslinks between hydroxyl groups on the surface of an oxide layer of the silicon wafer and the carboxyl groups of 1-H-indene-3-carboxylic acid grafted to the polymer are formed at the photoresist–silicon interface, thereby leading to an increase in the specific energy G of film delamination from the substrate. This effect is observed far beyond the ion range, being more pronounced in the case of implantation of phosphorus ions.

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REFERENCES

  1. Kondyurin, A. and Bilek, M., Ion Beam Treatment of Polymers: Application Aspects from Medicine to Space, Amsterdam: Elsevier, 2015, 2nd ed., p. 256.

    Google Scholar 

  2. Odzhaev, V.B., Kozlov, I.P., Popok, V.N., and Sviridov, D.V., Ionnaya implantatsiya polimerov (Ion Implantation into Polymers), Minsk: Belgosuniversitet, 1998.

  3. Moreau, W.M., Semiconductor Lithography, New York: Plenum, 1988.

    Book  Google Scholar 

  4. Brinkevich, D.I., Brinkevich, S.D., Vabishchevich, N.V., Odzhaev, V.B., and Prosolovich, V.S., Russ. Microelectron., 2014, vol. 43, no. 3, p. 194.

    Article  CAS  Google Scholar 

  5. Brinkevich, D.I., Kharchenko, A.A., Prosolovich, V.S., Odzhaev, V.B., Brinkevich, S.D., and Yankovskii, Yu.N., Russ. Microelectron, 2019, vol. 48, no. 3, p. 197.

    Article  CAS  Google Scholar 

  6. Brinkevich, D.I., Prosolovich, V.S., Yankovskii, Yu.N., Vabishchevich, S.A., Vabishchevich, N.V., and Gaishun, V.E, Prib.Metody Izmer., 2016, vol. 7, no. 1, p. 77.

    Article  Google Scholar 

  7. Rosenfeld, L.G., Ritter, J.R., Lardner, T.J., and Lin, M.R., J. Appl. Phys., 1990, vol. 67, no. 7, p. 3291.

    Article  Google Scholar 

  8. Malzbender, J., Toonder, J.M.J., Balkenende, A.R., and de With, G., Mater. Sci. Eng. R., 2002, vol. 36, p. 47.

    Article  Google Scholar 

  9. Brinkevich, D.I., Vabishchevich, N.V., and Prosolovich, V.S., Inorg. Mater., 2012, vol. 48, no. 8, p. 768.

    Article  CAS  Google Scholar 

  10. Vabishchevich, S.A., Vabishchevich, N.V., Brinkevich, D.I., Prosolovich, V.S., and Brinkevich, S.D., Vestn. Polotsk. Gos. Univ., Ser. C: Fundam. Nauki, 2016, no. 12, p. 51.

  11. Brinkevich, S.D., Reztsov, I.A., and Shadyro, O.I., High Energy Chem., 2014, vol. 48, no. 5, p. 303.

    Article  CAS  Google Scholar 

  12. Brinkevich, S.D., Maliborskii, A.Ya., Kapusto, I.A., Sverdlov, R.L., Grigor’ev, Yu.V., Ivashkevich, O.A., and Shadyro, O.I., High Energy Chem., 2019, vol. 53, no. 2, p. 147.

    Article  CAS  Google Scholar 

  13. Brinkevich, S.D., Kuzmuk, D.A., Sverdlov, R.L., and Shadyro, O.I., High Energy Chem., 2019, vol. 53, no. 6, p. 472.

    Article  Google Scholar 

  14. Neta, P. and Steenken, S., The Chemistry of Phenols, Rappoport, Z., Ed., Chichester, Wiley, 2003, part 1, p. 1097.

  15. Eksperimental’nye metody khimii vysokikh energii (Experimental Techniques in High Energy Chemistry) Mel’nikov, M.Ya., Ed., Moscow: Izd. MGU, 2009, p. 169.

  16. Harchenko, A.A., Brinkevich, D.I., Brinkevich, S.D., Lukashevich, M.G., and Odzhaev, V.B., J. Surf. Invest.: X-ray, Synchrotron Neutron Tech., 2015, vol. 9, no. 1, p. 87.

    Article  CAS  Google Scholar 

  17. Brinkevich, D.I., Kharchenko, A.A., Brinkevich, S.D., Lukashevich, M.G., Odzhaev, V.B., Valeev, V.F., Nuzhdin, V.I., and Khaibullin, R.I., J. Surf. Invest.: X-ray, Synchrotron Neutron Tech., 2017, vol. 11, no. 4, p. 801.

    Article  CAS  Google Scholar 

  18. Harchenko, A.A., Brinkevich, D.I., Brinkevich, S.D., Lukashevich, M.G., and Odzhaev, V.B., J. Surf. Invest.: X-ray, Synchrotron Neutron Tech., 2015, vol. 9, no. 2, p. 371.

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Polotsk State University, 214400, Novopolotsk, Belarus

    S. A. Vabishchevich

  2. Belarussian State University, 220050, Minsk, Belarus

    S. D. Brinkevich, D. I. Brinkevich & V. S. Prosolovich

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  1. S. A. Vabishchevich
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  2. S. D. Brinkevich
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  3. D. I. Brinkevich
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  4. V. S. Prosolovich
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Correspondence to S. D. Brinkevich.

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Translated by V. Makhlyarchuk

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Vabishchevich, S.A., Brinkevich, S.D., Brinkevich, D.I. et al. Adhesion of Diazoquinone–Novolac Photoresist Films Implanted with Boron and Phosphorus Ions to Single-Crystal Silicon. High Energy Chem 54, 46–50 (2020). https://doi.org/10.1134/S0018143920010129

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  • DOI: https://doi.org/10.1134/S0018143920010129

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